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CA3096E +BOM

CA3096E product description

Manufacturer:

Renesas Electronics
Mfr.Part #:

CA3096E
Datasheet:

CA3096E Datasheet (PDF)
Transistor Polarity:

NPN, PNP
Configuration:

Quint
Collector- Emitter Voltage VCEO Max:

40 V
Collector- Base Voltage VCBO:

45 V
EDA/CAD Models:

Request Free CAD Models for CA3096E

CA3096E General Description

The CA3096E transistor array is the epitome of versatility and reliability, featuring a monolithic NPN silicon design with five transistors sporting common emitter connections. Packaged in a sleek 18-lead dual in-line plastic package, this array offers a voltage rating of 15V and a current rating of 100mA, making it an ideal choice for a wide range of low to medium power amplification tasks. With tightly matched transistor characteristics, the CA3096E ensures consistent performance, making it a perfect fit for precision circuit designs that require pinpoint accuracy. Its seamless interconnectivity allows for the creation of intricate circuit configurations like differential amplifiers, current mirrors, and voltage sources. Operating seamlessly across a broad temperature range from -55°C to 125°C, this transistor array excels in various operating environments. Boasting a low collector-to-emitter saturation voltage and high current gain, the CA3096E delivers exceptional performance in amplification tasks, setting a new standard for quality and efficiency

Key Features

High-speed, low-power amplifier
Fast switching, high-current transistor
Low noise, wide bandwidth operation
Multi-purpose IC for audio amplifiers
Rugged, high-reliability performance
Easy to use, flexible design

Application

RF signal processing
Audio amplification
Industrial monitoring

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN, PNP
Configuration	Quint	Collector- Emitter Voltage VCEO Max	40 V
Collector- Base Voltage VCBO	45 V	Emitter- Base Voltage VEBO	6 V
Maximum DC Collector Current	50 mA	Pd - Power Dissipation	200 mW
Gain Bandwidth Product fT	335 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C	DC Collector/Base Gain hfe Min	150 at 1 mA, 5 V
Height	4.95 mm	Length	19.68 mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	7.11 mm
Unit Weight	0.057419 oz