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High-performance transistors for efficient power transmissio
SMDManufacturer:
Mfr.Part #:
CGH31240F
Datasheet:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
2.7 GHz to 3.1 GHz
EDA/CAD Models:
All bill of materials (BOM) can be sent via email to
[email protected],
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RF Mosfet 28 V 1 A 2.7GHz ~ 3.1GHz 12dB 250W 440201
Product Category: | RF JFET Transistors | Shipping Restrictions: | This product may require additional documentation to export from the United States. |
Transistor Type: | HEMT | Technology: | GaN |
Operating Frequency: | 2.7 GHz to 3.1 GHz | Gain: | 12 dB |
Transistor Polarity: | N-Channel | Vds - Drain-Source Breakdown Voltage: | 120 V |
Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V | Id - Continuous Drain Current: | 24 A |
Output Power: | 240 W | Maximum Drain Gate Voltage: | - |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 345 W | Mounting Style: | Flange Mount |
Packaging: | Tray | Application: | Radar |
Fall Time: | - | Forward Transconductance - Min: | - |
Height: | 3.76 mm | Length: | 24.33 mm |
Operating Temperature Range: | - | Product: | GaN HEMT |
Product Type: | RF JFET Transistors | Rise Time: | - |
Factory Pack Quantity: | 1 | Subcategory: | Transistors |
Type: | GaN SiC HEMT | Typical Turn-Off Delay Time: | - |
Vgs th - Gate-Source Threshold Voltage: | - 3 V | Width: | 23.62 mm |
Unit Weight: | 1.132118 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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