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CGHV35400F1 +BOM

RF JFET Transistors 400W, GaN HEMT, 50V, 2.9-3.5GHz, IM FET, Flange

Manufacturer:

WOLFSPEED, INC
Mfr.Part #:

CGHV35400F1
Datasheet:

CGHV35400F1 Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

2.9 GHz to 3.5 GHz
EDA/CAD Models:

Request Free CAD Models for CGHV35400F1

RF Mosfet 50 V 500 mA 2.9GHz ~ 3.5GHz 15dB 400W 440226

Product Category:	RF JFET Transistors	Shipping Restrictions:	This product may require additional documentation to export from the United States.
Transistor Type:	HEMT	Technology:	GaN
Operating Frequency:	2.9 GHz to 3.5 GHz	Gain:	11 dB
Transistor Polarity:	N-Channel	Vds - Drain-Source Breakdown Voltage:	125 V
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V	Id - Continuous Drain Current:	24 A
Output Power:	400 W	Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C	Mounting Style:	Flange Mount
Packaging:	Tray	Product Type:	RF JFET Transistors
Factory Pack Quantity:	1	Subcategory:	Transistors
Vgs th - Gate-Source Threshold Voltage:	3 V