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CGHV40100P +BOM

RF Mosfet 50 V 600 mA 0Hz ~ 4GHz 11dB 116W 440206

CGHV40100P General Description

RF Mosfet 50 V 600 mA 0Hz ~ 4GHz 11dB 116W 440206

Specifications

Product Category: RF JFET Transistors Transistor Type: HEMT
Technology: GaN Operating Frequency: DC to 3 GHz
Gain: 17.5 dB Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Id - Continuous Drain Current: 8.7 A Output Power: 100 W
Maximum Drain Gate Voltage: - Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 83 W
Mounting Style: Flange Mount Packaging: Tray
Application: General Purpose Forward Transconductance - Min: -
Product Type: RF JFET Transistors Factory Pack Quantity: 1
Subcategory: Transistors Vgs th - Gate-Source Threshold Voltage: - 3 V

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