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See Technical Specifications

CNW83 +BOM

Compact and lightweight design makes it easy to integrate into a variety of applications, including automation and process control

Optoisolator Transistor with Base Output 5900Vrms 1 Channel 6-DIP

Wide body DIL encapsulation, with a pin distance of 10.16 mm.
Minimum creepage distance 10 mm.
High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
UL recognized (File # E90700)

Product Category	Transistor Output Optocouplers	Mounting Style	Through Hole
Number of Channels	1 Channel	Isolation Voltage	5900 Vrms
Output Type	NPN Phototransistor	If - Forward Current	100 mA
Vf - Forward Voltage	1.5 V	Maximum Collector Emitter Voltage	50 V
Maximum Collector Current	100 mA	Maximum Collector Emitter Saturation Voltage	400 mV
Vr - Reverse Voltage	5 V	Pd - Power Dissipation	200 mW
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 100 C
Series	CNW83	Configuration	1 Channel
Current Transfer Ratio	0.8 %	Height	5.08 mm
Length	8.89 mm	Product Type	Transistor Output Optocouplers
Subcategory	Optocouplers	Width	6.86 mm
Unit Weight	0.014110 oz