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FOD817B +BOM

5kV 50mA 1 1.2V PDIP-4 Optocouplers - Phototransistor Output ROHS

FOD817B General Description

The FOD817B is a versatile optocoupler component that combines an infrared emitting diode with a silicon phototransistor in a compact 4-pin dual in-line package. With its gallium arsenide construction, this product ensures reliable and efficient signal transmission between input and output circuits

Key Features

  • AC Input Response (FOD814)
  • Current Transfer Ratio in Selected Groups:
  • FOD814: 20-300%
  • FOD814A: 50-150%
  • FOD817: 50-600%
  • FOD817A: 80-160%
  • FOD817B: 130-260%
  • FOD817C: 200-400%
  • FOD817D: 300-600%
  • Minimum BVCEO of 70 V Guaranteed
  • Safety and Regulatory Approvals
  • UL1577, 5,000 VACRMS for 1 Minute
  • DIN EN/IEC60747-5-5

Application

  • AC-DC Merchant Power Supply
  • Consumer Appliances
  • Industrial Motor

Specifications

Product Category Transistor Output Optocouplers Mounting Style Through Hole
Number of Channels 1 Channel Isolation Voltage 5000 Vrms
Output Type NPN Phototransistor Current Transfer Ratio - Min 130 %
Current Transfer Ratio - Max 260 % If - Forward Current 50 mA
Vf - Forward Voltage 1.4 V Maximum Collector Emitter Voltage 70 V
Maximum Collector Current 50 mA Maximum Collector Emitter Saturation Voltage 200 mV
Rise Time 18 us Fall Time 18 us
Vr - Reverse Voltage 6 V Pd - Power Dissipation 200 mW
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 110 C
Series FOD817B Collector-Emitter Breakdown Voltage 70 V
Configuration 1 Channel Current Transfer Ratio 130 %
Height 4 mm Length 5.1 mm
Product Type Transistor Output Optocouplers Factory Pack Quantity 2000
Subcategory Optocouplers Width 7 mm
Unit Weight 0.009171 oz

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In Stock: 7,274

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