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See Technical Specifications

H11G1SR2M +BOM

6-Pin DIP High Voltage Photodarlington Output Optocoupler

Manufacturer:

Onsemi
Mfr.Part #:

H11G1SR2M
Datasheet:

H11G1SR2M Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

646BY
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for H11G1SR2M

H11G1SR2M General Description

The gallium arsenide infrared emitting diode in these optocouplers provides a reliable light source, while the silicon darlington phototransistor offers high sensitivity for detecting light signals. This combination of components results in a dependable and accurate optocoupler solution for a range of electronic systems

Key Features

High BV_CEO:
100 V Minimum for H11G1M
80 V Minimum for H11G2M
High Sensitivity to Low Input Current (Minimum 500% CTR at IF= 1 mA)
Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80°C)
Safety and Regulatory Approvals:
UL1577, 4,170 VAC_RMS for 1 Minute
DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Application

Consumer Appliances
Industrial Motor

Specifications

Status	Active	Compliance	PbAHP
Case Outline	646BY	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	1000	ON Target	N
Channels	1	CTR (Min) (%)	500
CTR tested @ IF (mA)	1	VCE(sat) (Max) (V)	1
BVCEO (Min) (V)	100	BVCBO (Min) (V)	100
BVECO (Min) (V)	7	ton (Max) (µs)	5
toff (Max) (µs)	100	VISO (Min) (V)	5300
TOPR (Min) (°C)	-40	TOPR (Max) (°C)	100
Pricing ($/Unit)	$0.3227Sample