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EM6K6T2R +BOM

Dual N-CH Small Signal 20V MOSFET

EM6K6T2R General Description

Ideal for a wide range of applications including wireless communication, radar systems, and industrial control, the EM6K6T2R's top-notch performance characteristics and compact size make it a versatile choice for designers seeking to optimize their RF and microwave circuits

Application

SWITCHING

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 6 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.3 A Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F6
JESD-609 Code e2 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.15 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish Tin/Copper (Sn98Cu2)
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Product Category MOSFET
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 300 mA
Rds On - Drain-Source Resistance 1 Ohms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 300 mV Qg - Gate Charge -
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 150 mW Channel Mode Enhancement
Series EM6K6 Fall Time 10 ns
Height 0.5 mm Length 1.6 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 8000
Subcategory MOSFETs Transistor Type 2 N-Channel MOSFET
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 5 ns
Width 1.2 mm Part # Aliases EM6K6
Unit Weight 0.000106 oz

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