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EMB53T2R +BOM

Bipolar Transistors - Pre-Biased PNP+PNP Digital transistor (with built-in resistors)

EMB53T2R General Description

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

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Specifications

Product Category: Bipolar Transistors - Pre-Biased Configuration: Dual
Transistor Polarity: PNP Typical Input Resistor: 4.7 kOhms
Mounting Style: SMD/SMT DC Collector/Base Gain hfe Min: 100 at - 5 mA, - 10 V
Maximum Operating Frequency: 250 MHz Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 100 mA Pd - Power Dissipation: 150 mW
Maximum Operating Temperature: + 150 C Packaging: Cut Tape
Emitter- Base Voltage VEBO: 5 V Product Type: BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity: 8000 Subcategory: Transistors
Part # Aliases: EMB53

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