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EMG1T2R +BOM

Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA

EMG1T2R General Description

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

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Specifications

Product Category: Bipolar Transistors - Pre-Biased Configuration: Dual Common Emitter
Transistor Polarity: NPN Typical Input Resistor: 22 kOhms
Typical Resistor Ratio: 1 Mounting Style: SMD/SMT
DC Collector/Base Gain hfe Min: 56 Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 100 mA Peak DC Collector Current: 100 mA
Pd - Power Dissipation: 150 mW Maximum Operating Temperature: + 150 C
Series: EMG1 Packaging: MouseReel
Height: 0.5 mm Length: 1.6 mm
Product Type: BJTs - Bipolar Transistors - Pre-Biased Factory Pack Quantity: 8000
Subcategory: Transistors Width: 1.2 mm
Part # Aliases: EMG1

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