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FCA47N60 +BOM

650V MOSFET SUPER FET FCA47N60

Manufacturer:

onsemi
Mfr.Part #:

FCA47N60
Datasheet:

FCA47N60 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FCA47N60

FCA47N60 General Description

Designed to minimize conduction loss and enhance switching capabilities, the SuperFET MOSFET sets a new standard for power components in the industry. Its ability to handle high dv/dt rates and increased avalanche energy further demonstrates its reliability and versatility. Engineers and designers can confidently integrate this MOSFET into their projects with the assurance of exceptional performance and optimized power efficiency

Key Features

Ultra-low R_DSON
T_J = 130°C
Typ. Q_g = 200nC
C_oss.eff = 400pF
Avalanche tested

Application

High performance components
Advanced power management
Efficient utilization of energy

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	47 A
Rds On - Drain-Source Resistance	70 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	270 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	417 W	Channel Mode	Enhancement
Tradename	SuperFET	Series	FCA47N60
Configuration	Single	Fall Time	75 ns
Forward Transconductance - Min	40 S	Height	20.1 mm
Length	16.2 mm	Product Type	MOSFET
Rise Time	210 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	N-Channel MOSFET	Typical Turn-Off Delay Time	520 ns
Typical Turn-On Delay Time	185 ns	Width	5 mm
Unit Weight	0.162260 oz