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FCB20N60TM +BOM

High-performance N-channel MOSFET for demanding power conversion tasks

FCB20N60TM General Description

Product FCB20N60TM is a cutting-edge SuperFET® MOSFET that boasts impressive features tailored for high voltage applications. Utilizing charge balance technology, this first-generation SJ MOSFET offers exceptional low on-resistance and reduced gate charge for enhanced performance. With a focus on minimizing conduction loss and improving switching capabilities, SuperFET MOSFET is ideal for a variety of power applications

Key Features

  • 400V @T = 125°C
  • Typ. R = 90mΩ
  • High frequency operation (Typ. f = 1MHz)
  • Avalanche tested to 250V
  • Silicon-on-nitride construction
  • JIS compliant

Application

  • Versatile for different needs.
  • Adaptable to various tasks.
  • Perfect for diverse applications.

Specifications

Status Active, Not Rec Compliance PbAHP
Case Outline 418AJ MSL Type 1
MSL Temp (°C) 245 Container Type REEL
Container Qty. 800 ON Target N
Channel Polarity N-Channel Configuration Single
V(BR)DSS Min (V) 600 ID Max (A) 20
PD Max (W) 208 RDS(on) Max @ VGS = 10 V (mΩ) 190
Qg Typ @ VGS = 10 V (nC) 75 Pricing ($/Unit) $2.34Sample

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