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FCPF190N60 +BOM

Fast switching N-Channel Power MOSFET rated at 600V, 20.2A, 199mΩ, TO-220F

Manufacturer:

onsemi
Mfr.Part #:

FCPF190N60
Datasheet:

FCPF190N60 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FCPF190N60

FCPF190N60 General Description

The FCPF190N60 SuperFET®II MOSFET is a cutting-edge high voltage super-junction MOSFET that stands out for its advanced charge-balance technology, resulting in remarkably low on-state resistance and reduced gate charge. Designed with precision to not only lower conduction loss but also enhance switching performance, this innovative MOSFET is a game-changer in the realm of power electronics. Additionally, it boasts a significantly higher dv/dt rate and increased avalanche energy compared to traditional super-junction MOSFETs, making it a top choice for various switching power applications that prioritize system miniaturization and improved efficiency

Key Features

1000V @T_J = 125°C
Max. R_DS(on) = 180mΩ
Safe isolation between channels

Application

Unmatched performance guaranteed.
Flexible and versatile usage.
Top-rated product in its class.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V	Id - Continuous Drain Current	20.2 A
Rds On - Drain-Source Resistance	199 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	74 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	39 W	Channel Mode	Enhancement
Tradename	SuperFET II	Series	FCPF190N60
Configuration	Single	Height	16.07 mm
Length	10.36 mm	Product Type	MOSFET
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.9 mm
Unit Weight	0.068784 oz