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IGB15N65S5ATMA1 +BOM

IGBT Trench Field Stop 650 V 35 A 105 W Surface Mount PG-TO263-3-2

IGB15N65S5ATMA1 General Description

IGBT Trench Field Stop 650 V 35 A 105 W Surface Mount PG-TO263-3-2

Infineon Technologies Corporation Inventory

Key Features

  • Very low V
  • CEsat
  • c
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  • Maximum junction temperature>
  • Qualified according to JEDEC standards
  • V 
  • CE(peak)
  • Suitable for use with single turn-on / turn-off gate resistor
  • No need for gate clamping components
  • Gate drivers with Miller clamping not required
  • Reduction in the EMI filtering needed
  • Excellent for paralleling
Infineon Technologies Corporation Original Stock

Application

  • AC-DC power supplies
  • Energy Storage Systems
  • Industrial heating and welding
  • Solutions for photovoltaic energy systems

Specifications

RHoS yes PBFree yes
HalogenFree yes

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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IGB15N65S5ATMA1 Datasheet PDF

Preliminary Specification IGB15N65S5ATMA1 PDF Download

IGB15N65S5ATMA1 PDF Preview

In Stock: 3,442

Minimum Order: 1

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