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IGP40N65F5XKSA1 +BOM

IGBT 650 V 74 A 255 W Through Hole PG-TO220-3

IGP40N65F5XKSA1 General Description

IGBT 650 V 74 A 255 W Through Hole PG-TO220-3

Infineon Technologies Corporation Inventory

Key Features

  • 650V breakthrough voltage
  • Compared to Infineon’s Best-in-class HighSpeed 3 family
  • Factor 2.5 lower Q 
  • g
  • Factor 2 reduction in switching losses
  • 200mV reduction in V 
  • CE(sat)
  • Low C 
  • OES
  • OSS
  • Mild positive temperature coefficient V 
  • CE(sat)
  • Temperature stability of V 
  • f
  • Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50V increase in the bus voltage possible without compromising reliability
  • Higher power density design
Infineon Technologies Corporation Original Stock

Application

  • Industrial heating and welding
  • Uninterruptible Power Supplies (UPS)

Specifications

RHoS yes PBFree yes
HalogenFree yes

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