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IGW40N120H3FKSA1 +BOM

IGBT Trench Field Stop 1200 V 80 A 483 W Through Hole PG-TO247-3-1

IGBT Trench Field Stop 1200 V 80 A 483 W Through Hole PG-TO247-3-1

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V
CEsat
behavior thanks to the famous Infineon TRENCHSTOP technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T
j(max)
Packaged with and without freewheeling diode for increased design freedom
Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 1200 V IGBT efficiency and EMI behavior

Alternative Energy, Power Management

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop®
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	80 A	Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A	Power - Max	483 W
Switching Energy	3.16mJ	Input Type	Standard
Gate Charge	185 nC	Td (on/off) @ 25°C	30ns/290ns
Test Condition	600V, 40A, 12Ohm, 15V	Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	IGW40N120
RHoS	yes	PBFree	yes
Product Category	IGBT Transistors	Technology	Si
Maximum Gate Emitter Voltage	- 20 V, 20 V	Product Type	IGBT Transistors
Subcategory	IGBTs	Tradename	TRENCHSTOP
Part # Aliases	IGW40N120H3 SP000667510