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ISL9R18120G2 +BOM

18A, 1200V, STEALTH™ Diode

Manufacturer:

onsemi
Mfr.Part #:

ISL9R18120G2
Datasheet:

ISL9R18120G2 Datasheet (PDF)
Series:

Stealth™
Technology:

Avalanche
Voltage - DC Reverse (Vr) (Max):

1200 V
Current - Average Rectified (Io):

18A
EDA/CAD Models:

Request Free CAD Models for ISL9R18120G2

ISL9R18120G2 General Description

The ISL9R18120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (I_RR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I_RR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Key Features

Stealth recovery T_rr = 300ns (@I_F= 18A)
Max Forward Voltage, V_F = 3.3V (@ T_C = 25°C)
1200V Reverse Voltage and High Reliability
Avalanche Energy Rated
RoHS compliant

Application

Uninterruptible Power Supply

Specifications

Series	Stealth™	Technology	Avalanche
Voltage - DC Reverse (Vr) (Max)	1200 V	Current - Average Rectified (Io)	18A
Voltage - Forward (Vf) (Max) @ If	3.3 V @ 18 A	Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	70 ns	Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Capacitance @ Vr, F	-	Mounting Type	Through Hole
Operating Temperature - Junction	-55°C ~ 150°C	Base Product Number	ISL9R18120