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ISL9R30120G2 +BOM

30A, 1200V, STEALTH™ Diode

Manufacturer:

onsemi
Mfr.Part #:

ISL9R30120G2
Datasheet:

ISL9R30120G2 Datasheet (PDF)
Series:

Stealth™
Technology:

Avalanche
Voltage - DC Reverse (Vr) (Max):

1200 V
Current - Average Rectified (Io):

30A
EDA/CAD Models:

Request Free CAD Models for ISL9R30120G2

ISL9R30120G2 General Description

The ISL9R30120G2 is an advanced STEALTH™ diode designed for high frequency applications, offering low loss performance and efficient operation. With its low reverse recovery current and soft recovery characteristics, this diode is ideal for use in power supplies and power switching applications. By reducing loss in switching transistors and minimizing ringing, the ISL9R30120G2 enables optimized performance without the need for additional snubber circuitry. This results in enhanced reliability and cost savings in power system designs. When paired with an SMPS IGBT, this diode can further enhance efficiency and power density, making it a versatile and valuable component for a wide range of applications

Key Features

Low Dropout Voltage
High Ripple Rejection
12V Output and Soft Start

Application

Powerful Graphics Card
Efficient Cooling System
Advanced Gaming Technology

Specifications

Series	Stealth™	Technology	Avalanche
Voltage - DC Reverse (Vr) (Max)	1200 V	Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	3.3 V @ 30 A	Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	100 ns	Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Mounting Type	Through Hole	Operating Temperature - Junction	-55°C ~ 150°C
Base Product Number	ISL9R30120