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See Technical Specifications

ISL9R18120P2 +BOM

8A rectifier with fast 70ns switching time

Manufacturer:

onsemi
Mfr.Part #:

ISL9R18120P2
Datasheet:

ISL9R18120P2 Datasheet (PDF)
Series:

Stealth™
Technology:

Avalanche
Voltage - DC Reverse (Vr) (Max):

1200 V
Current - Average Rectified (Io):

18A
EDA/CAD Models:

Request Free CAD Models for ISL9R18120P2

ISL9R18120P2 General Description

The ISL9R18120P2 power MOSFET from Renesas Electronics is a standout component in the field of power electronics. Designed for high-power switching applications, this MOSFET offers a voltage rating of 1200 volts and a robust current handling capacity, making it an ideal choice for demanding industrial environments where precision power control is a priority

Specifications

Series	Stealth™	Technology	Avalanche
Voltage - DC Reverse (Vr) (Max)	1200 V	Current - Average Rectified (Io)	18A
Voltage - Forward (Vf) (Max) @ If	3.3 V @ 18 A	Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	70 ns	Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Capacitance @ Vr, F	-	Mounting Type	Through Hole
Operating Temperature - Junction	-55°C ~ 150°C	Base Product Number	ISL9