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IXGK100N170 +BOM
IGBT 1700 V 170 A 830 W Through Hole PLUS264™
TO-264-3-
Manufacturer:
-
Mfr.Part #:
IXGK100N170
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.7 kV
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EDA/CAD Models:
Availability: 7072 PCS
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IXGK100N170 General Description
IGBT 1700 V 170 A 830 W Through Hole PLUS264™
Key Features
LOW CONDUCTION LOSSApplication
POWER CONTROLSpecifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 3 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 170 A |
Pd - Power Dissipation | 830 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | IXGK100N170 |
Continuous Collector Current | 170 A | Continuous Collector Current Ic Max | 600 A |
Gate-Emitter Leakage Current | 200 nA | Height | 26.59 mm |
Length | 20.29 mm | Operating Temperature Range | - 55 C to + 150 C |
Product Type | IGBT Transistors | Factory Pack Quantity | 25 |
Subcategory | IGBTs | Width | 5.31 mm |
Unit Weight | 0.373904 oz |
Service Policies and Others
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[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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