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IXYH40N90C3D1 +BOM
900V, 90A Transistor: IXYH40N90C3D1, TO-247AD
TO-247-3-
Manufacturer:
-
Mfr.Part #:
IXYH40N90C3D1
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
900 V
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EDA/CAD Models:
Availability: 7072 PCS
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IXYH40N90C3D1 General Description
IGBT 900 V 90 A 500 W Through Hole TO-247 (IXTH)
Key Features
High Voltage Package
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of Vce(sat)
Avalanche Rated
International Standard Packages
Application
POWER CONTROLSpecifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 900 V | Collector-Emitter Saturation Voltage | 2.5 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 90 A |
Pd - Power Dissipation | 500 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | IXYH40N90 |
Continuous Collector Current | 90 A | Continuous Collector Current Ic Max | 180 A |
Gate-Emitter Leakage Current | 100 nA | Height | 21.46 mm |
Length | 16.26 mm | Operating Temperature Range | - 55 C to + 150 C |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Tradename | XPT, GenX3 |
Width | 5.3 mm | Unit Weight | 0.158733 oz |
Service Policies and Others
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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