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Trans IGBT Chip N-CH 600V 190A 830W 3-Pin TO-247AD
TO-247-3Manufacturer:
Mfr.Part #:
IXXH100N60C3
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
EDA/CAD Models:
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Installation of the IXXH100N60C3 module is a breeze thanks to its compact and rugged design. This module is built to withstand harsh operating conditions, making it a durable and long-lasting solution for your needs. With built-in protection features such as overcurrent and overtemperature protection, you can trust that the IXXH100N60C3 will provide safe and reliable operation every time
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.2 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 190 A |
Pd - Power Dissipation | 830 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | IXXH100N60 |
Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Tradename | XPT | Unit Weight | 0.229281 oz |
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