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See Technical Specifications

IXBH10N300HV +BOM

IGBT 3000 V 34 A 180 W Through Hole TO-247HV (IXBH)

Manufacturer:

IXYS
Mfr.Part #:

IXBH10N300HV
Datasheet:

IXBH10N300HV Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

3 kV
EDA/CAD Models:

Request Free CAD Models for IXBH10N300HV

IXBH10N300HV General Description

The IXBH10N300HV is a game-changing BiMOSFET product that combines the strengths of MOSFETs and IGBTs. Utilizing non-epitaxial construction and state-of-the-art fabrication processes, these high voltage devices have quickly become a success in the industry. They are well-suited for parallel operation, with both the saturation voltage and the forward voltage drop of the intrinsic diode exhibiting a positive voltage temperature coefficient. Additionally, the built-in body diode acts as a protection diode, offering an alternative path for the inductive load current during device turn-off to prevent damage from high Ldi/dt voltage transients. The IXBH10N300HV is an ideal choice for a wide range of applications, thanks to its innovative design and superior performance

Key Features

Real-time monitoring capabilities
Advanced alarm management
Simplified troubleshooting process
Increased system flexibility

Application

Power systems
Electronic devices
Voltage regulators

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	3 kV	Collector-Emitter Saturation Voltage	2.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	34 A
Pd - Power Dissipation	180 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current Ic Max	88 A
Gate-Emitter Leakage Current	100 nA	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Unit Weight	0.211644 oz