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IXA55I1200HJ +BOM

IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins

Manufacturer:

IXYS
Mfr.Part #:

IXA55I1200HJ
Datasheet:

IXA55I1200HJ Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV

IXA55I1200HJ General Description

The IXA55I1200HJ power module from IXYS sets a new standard for high-power applications with its dual IGBT configuration and impressive 55A current rating. This powerhouse module is perfect for industrial drives, inverters, and renewable energy systems, providing exceptional performance and efficiency. Its low conduction and switching losses make it a top choice for high-frequency operation, while its rugged construction ensures reliable operation in even the harshest conditions

Application

POWER CONTROL

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	84 A
Pd - Power Dissipation	290 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXA55I1200HJ
Continuous Collector Current Ic Max	54 A	Gate-Emitter Leakage Current	500 nA
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	XPT
Unit Weight	0.186952 oz