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See Technical Specifications

IXBT2N250 +BOM

IGBT 2500 V 5 A 32 W Surface Mount TO-268AA

Manufacturer:

IXYS
Mfr.Part #:

IXBT2N250
Datasheet:

IXBT2N250 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

2.5 kV
EDA/CAD Models:

Request Free CAD Models for IXBT2N250

IXBT2N250 General Description

The IXBT2N250 stands as a groundbreaking BiMOSFET, integrating the strengths of MOSFETs and IGBTs into one exceptional device. Its non-epitaxial construction and advanced fabrication processes have set it apart as a resounding success. Ideal for parallel operation, these high voltage devices feature a positive voltage temperature coefficient for both their saturation voltage and forward voltage drop of their intrinsic diode. Additionally, the embedded "free" intrinsic body diode acts as a safeguard, providing an alternative path for the inductive load current during device turn-off and effectively shielding against damage from high Ldi/dt voltage transients

Key Features

Space-saving design options
Highly reliable performance guaranteed
Easy integration into systems
Simplified testing procedures

Application

High voltage experimentation
Versatile pulsed power systems
Flexible AC switching

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	SMD/SMT	Configuration	Single
Collector- Emitter Voltage VCEO Max	2.5 kV	Collector-Emitter Saturation Voltage	3.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	5 A
Pd - Power Dissipation	32 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	Planar
Continuous Collector Current Ic Max	5 A	Gate-Emitter Leakage Current	+/- 100 nA
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	BIMOSFET
Unit Weight	0.211644 oz