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See Technical Specifications

IXGH40N120A2 +BOM

IGBT PT 1200 V 75 A 360 W Through Hole TO-247AD

Manufacturer:

IXYS
Mfr.Part #:

IXGH40N120A2
Datasheet:

IXGH40N120A2 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IXGH40N120A2

IXGH40N120A2 General Description

Elevate your projects with the superior performance of the IXGH40N120A2 from Littelfuse. This top-of-the-line Punch Through IGBT offers high gain, fast switching, and low conduction losses, making it the perfect choice for high-speed applications up to 100kHz. Whether you're working on UPS systems, off-line switching power supplies, or induction cooking projects, the IXGH40N120A2 is designed to deliver outstanding results. Choose the G-series variant with the integrated Ultrafast FRED diode for added convenience and efficiency

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	75 A
Pd - Power Dissipation	360 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXGH40N120
Continuous Collector Current	75 A	Continuous Collector Current Ic Max	160 A
Gate-Emitter Leakage Current	100 nA	Height	21.46 mm
Length	16.26 mm	Operating Temperature Range	- 55 C to + 150 C
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Width	5.3 mm
Unit Weight	0.229281 oz