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JANTXV2N6849 +BOM

-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3

Manufacturer:

Infineon
Mfr.Part #:

JANTXV2N6849
Datasheet:

JANTXV2N6849 Datasheet (PDF)
Configuration:

Discrete
ID Max:

-6.5 A
Polarity:

P
Qualification:

QPL
EDA/CAD Models:

Request Free CAD Models for JANTXV2N6849

JANTXV2N6849 General Description

This P-Channel transistor features a Silicon construction with Metal-oxide Semiconductor technology, offering enhanced reliability and performance. The TO-205AF package provides a hermetic seal for protection against environmental factors, making it suitable for harsh industrial applications. With a TO-39 form factor and 3-pin configuration, this transistor is easy to integrate into existing circuit designs

Key Features

Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
ESD Rating: Class 1C per MIL-STD-750, Method 1020

Specifications

Configuration	Discrete	ID max	-6.5 A
Polarity	P	Qualification	QPL
VBRDSS min	-100.0 V	QPL Part Number	2N6849
RDS (on) max	300.0 mΩ	Language	SPICE
Product Category	High reliability power MOSFETs