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K4H511638D-UCB3 +BOM
High-performance DDR DRAM suitable for various applications
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Manufacturer:
Samsung Semiconductor
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Mfr.Part #:
K4H511638D-UCB3
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Datasheet:
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Pbfree Code:
Yes
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Part Life Cycle Code:
Obsolete
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ECCN Code:
EAR99
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HTS Code:
8542.32.00.28
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Availability: 3053 PCS
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K4H511638D-UCB3 General Description
The Samsung K4H511638D-UCB3 DDR2 SDRAM module is a reliable and high-performance memory solution designed for desktop computers. With a capacity of 512MB and a clock speed of 333MHz, this module is perfect for handling multitasking, gaming, and other resource-intensive applications. Its compatibility with systems that support DDR2 SDRAM memory makes it a versatile and convenient option for users looking to enhance their system's capabilities without any hassle
Key Features
- Simplified installation
- Easy configuration
- Fully compatible
- Long lifespan
Application
- Stay ahead of the curve
- Enable future innovation
- Optimize performance
Specifications
Pbfree Code | Yes | Part Life Cycle Code | Obsolete |
ECCN Code | EAR99 | HTS Code | 8542.32.00.28 |
Access Time-Max | 0.7 ns | Clock Frequency-Max (fCLK) | 166 MHz |
I/O Type | COMMON | Interleaved Burst Length | 2,4,8 |
JESD-30 Code | R-PDSO-G66 | JESD-609 Code | e6 |
Memory Density | 536870912 bit | Memory IC Type | DDR1 DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 2 |
Number of Terminals | 66 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Temperature-Max | 70 °C |
Organization | 32MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | 260 | Power Supplies | 2.5 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.005 A |
Supply Current-Max | 0.38 mA | Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | COMMERCIAL | Terminal Finish | TIN BISMUTH |
Terminal Form | GULL WING | Terminal Pitch | 0.635 mm |
Terminal Position | DUAL |
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In Stock: 3,053
Minimum Order: 1
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