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Fast memory solution for high-performance applicatio
Manufacturer:
Samsung Semiconductor
Mfr.Part #:
K4H561638J-LCB3
Datasheet:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
compliant
ECCN Code:
EAR99
HTS Code:
8542.32.00.24
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When it comes to enhancing the performance of your electronic devices, the K4H561638J-LCB3 memory chip is a top choice. Its high level of reliability and durability ensures that your system runs smoothly without any hiccups. With fast data transfer speeds and seamless compatibility, this memory chip is a must-have for anyone looking to elevate their computing experience
Part Life Cycle Code | Obsolete | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8542.32.00.24 |
Access Time-Max | 0.7 ns | Clock Frequency-Max (fCLK) | 166 MHz |
I/O Type | COMMON | Interleaved Burst Length | 2,4,8 |
JESD-30 Code | R-PDSO-G66 | JESD-609 Code | e3 |
Memory Density | 268435456 bit | Memory IC Type | DDR1 DRAM |
Memory Width | 16 | Number of Terminals | 66 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Temperature-Max | 70 °C | Organization | 16MX16 |
Output Characteristics | 3-STATE | Qualification Status | Not Qualified |
Refresh Cycles | 8192 | Sequential Burst Length | 2,4,8 |
Standby Current-Max | 0.003 A | Supply Current-Max | 0.27 mA |
Supply Voltage-Nom (Vsup) | 2.5 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | COMMERCIAL |
Terminal Finish | Tin (Sn) | Terminal Form | GULL WING |
Terminal Pitch | 0.635 mm | Terminal Position | DUAL |
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