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See Technical Specifications

K4N51163QZ-HC20 +BOM

DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84,

Manufacturer:

SAMSUNG SEMICONDUCTOR INC
Mfr.Part #:

K4N51163QZ-HC20
Datasheet:

K4N51163QZ-HC20 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.28
EDA/CAD Models:

Request Free CAD Models for K4N51163QZ-HC20

Avaq Semiconductor offers the highly versatile and reliable K4N51163QZ-HC20 driver, produced by SAMSUNG SEMICONDUCTOR INC. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the K4N51163QZ-HC20.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.28
Access Time-Max	0.35 ns	Clock Frequency-Max (fCLK)	500 MHz
I/O Type	COMMON	Interleaved Burst Length	4,8
JESD-30 Code	R-PBGA-B84	Memory Density	536870912 bit
Memory IC Type	GDDR2 DRAM	Memory Width	16
Number of Terminals	84	Number of Words	33554432 words
Number of Words Code	32000000	Operating Temperature-Max	85 °C
Operating Temperature-Min		Organization	32MX16
Output Characteristics	3-STATE	Power Supplies	1.8 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Sequential Burst Length	4,8	Standby Current-Max	0.01 A
Supply Current-Max	0.3 mA	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	OTHER	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM