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See Technical Specifications

K4T51163QI-HCE6 +BOM

Authorized manufacturers and suppliers only

Manufacturer:

Samsung Electronics
Mfr.Part #:

K4T51163QI-HCE6
Datasheet:

K4T51163QI-HCE6 Datasheet (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
DRAM Type:

DDR2 SDRAM
EDA/CAD Models:

Request Free CAD Models for K4T51163QI-HCE6

K4T51163QI-HCE6 General Description

The K4T51163QI-HCE6 is a cutting-edge SDRAM chip developed by Samsung, boasting top-of-the-line performance and reliability. With a storage capacity of 8 gigabits and a lightning-fast data transfer rate of up to 3200 Mbps, this DDR4 SDRAM chip sets a new standard in memory technology. Its industrial-grade design, denoted by the "HCE6" suffix, ensures it can operate flawlessly even in extreme temperature conditions, making it ideal for a wide range of industrial applications

Key Features

Suitable for industrial control systems and automation applications
High-speed data transfer rates up to 533MB/s
Reliable operation with built-in error detection and correction
Durable design with ruggedized packaging for harsh environments
Compliant with RoHS, WEEE, and halogen-free for eco-friendliness

Application

Powerful and efficient
Perfect for mobile devices
High-speed DDR2 technology

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
DRAM Type	DDR2 SDRAM	Chip Density (bit)	512M
Organization	32Mx16	Number of Internal Banks	4
Number of Words per Bank	8M	Number of Bits/Word (bit)	16
Data Bus Width (bit)	16	Maximum Clock Rate (MHz)	667
Maximum Access Time (ns)	0.45	Address Bus Width (bit)	15
Interface Type	SSTL_1.8	Minimum Operating Supply Voltage (V)	1.7
Maximum Operating Supply Voltage (V)	1.9	Operating Current (mA)	115
Minimum Operating Temperature (°C)	0	Maximum Operating Temperature (°C)	95
Supplier Temperature Grade	Commercial	Number of I/O Lines (bit)	16
Mounting	Surface Mount	PCB changed	84
Pin Count	84	Lead Shape	Ball