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DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96,
FBGA96Manufacturer:
SAMSUNG SEMICONDUCTOR INC
Mfr.Part #:
K4W1G1646G-BC11
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Models:
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Avaq Semiconductor offers the highly versatile and reliable K4W1G1646G-BC11 driver, produced by SAMSUNG SEMICONDUCTOR INC. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the K4W1G1646G-BC11.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.32.00.32 | Access Time-Max | 0.195 ns |
Clock Frequency-Max (fCLK) | 933 MHz | I/O Type | COMMON |
Interleaved Burst Length | 8 | JESD-30 Code | R-PBGA-B96 |
JESD-609 Code | e3 | Memory Density | 1073741824 bit |
Memory IC Type | DDR3 DRAM | Memory Width | 16 |
Moisture Sensitivity Level | 1 | Number of Terminals | 96 |
Number of Words | 67108864 words | Number of Words Code | 64000000 |
Organization | 64MX16 | Output Characteristics | 3-STATE |
Power Supplies | 1.5 V | Qualification Status | Not Qualified |
Refresh Cycles | 8192 | Sequential Burst Length | 8 |
Standby Current-Max | 0.01 A | Supply Current-Max | 0.195 mA |
Supply Voltage-Nom (Vsup) | 1.5 V | Surface Mount | YES |
Technology | CMOS | Terminal Finish | MATTE TIN |
Terminal Form | BALL | Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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