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DRAM Chip Mobile-DDR SDRAM 1Gbit 32Mx32 1.8V 90-Pin FBGA
FBGA90Manufacturer:
Mfr.Part #:
K4X1G323PF-8GD8
Datasheet:
ECCN:
EAR99
Automotive:
No
Supplier Cage Code:
1542F
HTSUSA:
8542320032
EDA/CAD Models:
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1.8V power supply, 1.8V I/O power
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
1 /CS
1 CKE
Differential clock inputs(CK and CK)
MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
Internal Temperature Compensated Self Refresh
Deep Power Down Mode
All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
Data I/O transactions on both edges of data strobe, DM for masking.
Edge aligned data output, center aligned data input.
No DLL; CK to DQS is not synchronized.
LDM, UDM for write masking only.
Auto refresh duty cycle
- 7.8us for -25 to 85 C
ECCN | EAR99 | Automotive | No |
Supplier Cage Code | 1542F | HTSUSA | 8542320032 |
Schedule B | 8542320015 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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