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See Technical Specifications

PBR941,215 +BOM

Trans RF BJT NPN 10V 0.05A 360mW 3-Pin TO-236AB T/R

Manufacturer:

NXP
Mfr.Part #:

PBR941,215
Datasheet:

PBR941,215 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

10 V
EDA/CAD Models:

Request Free CAD Models for PBR941,215

PBR941,215 General Description

Rf Wideband Transistor, Npn, 10V, 8Ghz, 3-Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:10V; Transition Frequency:8Ghz; Power Dissipation:360Mw; Continuous Collector Current:50Ma; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nxp PBR941,215

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	10 V	Collector- Base Voltage VCBO	20 V
Emitter- Base Voltage VEBO	1.5 V	Maximum DC Collector Current	50 mA
Pd - Power Dissipation	360 mW	Gain Bandwidth Product fT	8 GHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Continuous Collector Current	50 mA	DC Collector/Base Gain hfe Min	50 at 5 mA, 6 V
DC Current Gain hFE Max	50 at 5 mA, 6 V	Height	1 mm
Length	3 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Width	1.4 mm
Part # Aliases	934043060215	Unit Weight	0.000282 oz