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60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
DFN2020D-6Manufacturer:
Mfr.Part #:
PBSS4260PANPSX
Datasheet:
Mounting Style:
SMD/SMT
Transistor Polarity:
NPN, PNP
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
60 V
EDA/CAD Models:
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With its innovative design, the PBSS4260PANPSX stands out as a superior choice for small signal applications. Housed in a leadless SMD package, this dual transistor offers breakthrough performance in a compact form factor. The visible and solderable side pads enhance ease of installation, ensuring reliable connections in various electronic setups. Paired with its complementary transistors, the PBSS4260PANSPNP and PBSS5260PAPS, this device enables versatile circuit designs with NPN/NPN and PNP/PNP configurations. From mobile devices to industrial controls, the PBSS4260PANPSX is a reliable solution for demanding electronic projects
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN, PNP | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 70 mV, 100 mV |
Maximum DC Collector Current | 2 A | Pd - Power Dissipation | 960 mW |
Gain Bandwidth Product fT | 140 MHz, 100 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Qualification | AEC-Q101 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Technology | Si |
Part # Aliases | 934068946115 | Unit Weight | 0.000257 oz |
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