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Bipolar Transistors - BJT PBSS4160PANP-Q/SOT1118/HUSON6
DFN2020-6Manufacturer:
Mfr.Part #:
PBSS4160PANP-QX
Datasheet:
Mounting Style:
SMD/SMT
Transistor Polarity:
NPN, PNP
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
60 V
EDA/CAD Models:
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Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 125MHz 370mW Surface Mount 6-HUSON (2x2)
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN, PNP | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 185 mV |
Maximum DC Collector Current | 1.5 A | Pd - Power Dissipation | 2 W |
Gain Bandwidth Product fT | 125 MHz, 175 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 1 A |
DC Collector/Base Gain hfe Min | 70 at 1A, 2 V | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Part # Aliases | 934664884115 |
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