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PC28F00BP30EFA +BOM

NOR Flash memory chip

Key Features

  • High-Performance Read, Program and Erase
  • – 96 ns initial read access
  • – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
  • – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
  • – 8-, 16-, and continuous-word synchronous-burst Reads
  • – Programmable WAIT configuration
  • – Customer-configurable output driver impedance
  • – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
  • – Block Erase: 0.9 s per block (typ)
  • – 20 μs (typ) program/erase suspend
  • Architecture
  • – 16-bit wide data bus
  • – Multi-Level Cell Technology
  • – Symmetrically-Blocked Array Architecture
  • – 256-Kbyte Erase Blocks
  • – 1-Gbit device: Eight 128-Mbit partitions
  • – 512-Mbit device: Eight 64-Mbit partitions
  • – 256-Mbit device: Eight 32-Mbit partitions
  • – 128-Mbit device: Eight 16-Mbit partitions
  • – Read-While-Program and Read-While-Erase
  • – Status Register for partition/device status
  • – Blank Check feature
  • Quality and Reliability
  • – Expanded temperature: –30 °C to +85 °C
  • – Minimum 100,000 erase cycles per block
  • – 65nm Process Technology
  • Power
  • – Core voltage: 1.7 V - 2.0 V
  • – I/O voltage: 1.7 V - 2.0 V
  • – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
  • – Deep Power-Down mode: 2 μA (typ)
  • – Automatic Power Savings mode
  • – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
  • Software
  • – Micron® Flash data integrator (FDI) optimized
  • – Basic command set (BCS) and extended command set (ECS) compatible
  • – Common Flash interface (CFI) capable
  • Security
  • – One-time programmable (OTP) space
  • 64 unique factory device identifier bits
  • 2112 user-programmable OTP bits
  • – Absolute write protection: VPP = GND
  • – Power-transition erase/program lockout
  • – Individual zero latency block locking
  • – Individual block lock-down
  • Density and packaging
  • – 128Mb, 256Mb, 512Mbit, and 1-Gbit
  • – Address-data multiplexed and non-multiplexed interfaces
  • – 64-Ball Easy BGA

Application

  • PC28F00BP30EFA essential in automotive
  • Perfect for routers
  • Great for switches

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 64 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 105 ns Additional Feature SYMMETRICAL BLOCKS
Command User Interface YES Common Flash Interface YES
Data Polling NO JESD-30 Code R-PBGA-B64
JESD-609 Code e1 Length 10 mm
Memory Density 2147483648 bit Memory IC Type FLASH
Memory Width 16 Number of Functions 1
Number of Sectors/Size 2K Number of Terminals 64
Number of Words 134217728 words Number of Words Code 128000000
Operating Mode SYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 128MX16
Page Size 16 words Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260 Programming Voltage 3 V
Qualification Status Not Qualified Seated Height-Max 1.2 mm
Sector Size 64K Standby Current-Max 0.00048 A
Supply Current-Max 0.031 mA Supply Voltage-Max (Vsup) 2 V
Supply Voltage-Min (Vsup) 1.7 V Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL Terminal Pitch 1 mm
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 30
Toggle Bit NO Type NOR TYPE
Width 8 mm

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