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PMBT3904QAZ +BOM

Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 440 mW Surface Mount DFN1010D-3

PMBT3904QAZ General Description

NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Nexperia Semiconductor (NXP) Inventory

Key Features

  • Leadless ultra small SMD plastic package
  • Low package height of 0.37 mm
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • Power dissipation comparable to SOT23
Nexperia Semiconductor (NXP) Original Stock

Application

  • General-purpose switching and amplification
Nexperia Semiconductor (NXP) Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Series -
Transistor Type NPN Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 440 mW Frequency - Transition 300MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number PMBT3904 Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT Transistor Polarity: NPN
Configuration: Single Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 60 V Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 120 mV Maximum DC Collector Current: 200 mA
Pd - Power Dissipation: 440 mW Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Packaging: MouseReel Continuous Collector Current: 200 mA
DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 300
Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 5000
Subcategory: Transistors Technology: Si
Part # Aliases: 934660463147 Unit Weight: 0.000040 oz

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