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See Technical Specifications

PMXB43UNEZ +BOM

20 V, N-channel Trench MOSFET

Manufacturer:

Nexperia Semiconductor (NXP)
Mfr.Part #:

PMXB43UNEZ
Datasheet:

PMXB43UNEZ Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

3.2A (Ta)
EDA/CAD Models:

Request Free CAD Models for PMXB43UNEZ

PMXB43UNEZ General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 42 mΩ
1 kV ESD protected

Nexperia Semiconductor (NXP) Original Stock

Application

Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V	Rds On (Max) @ Id, Vgs	54mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Vgs (Max)	±8V	Input Capacitance (Ciss) (Max) @ Vds	551 pF @ 10 V
FET Feature	-	Power Dissipation (Max)	400mW (Ta), 8.33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	PMXB43	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	Yes
feature-aec-qualified-number		feature-auto-motive
feature-p-pap		feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	No