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See Technical Specifications

PN2222ABU +BOM

Bipolar (BJT) Transistor NPN 40 V 1 A 300MHz 625 mW Through Hole TO-92-3

Manufacturer:

onsemi
Mfr.Part #:

PN2222ABU
Datasheet:

PN2222ABU Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

40 V
EDA/CAD Models:

Request Free CAD Models for PN2222ABU

PN2222ABU General Description

Designed for versatility, the PN2222ABU NPN Bipolar Transistor is a must-have for electronics enthusiasts and professionals alike. Its compact TO-92 package offers convenience in installations for both medium power and general applications. Count on this transistor to deliver consistent performance and reliability in all your linear and switching projects. When seeking a replacement part, the PN2222A is the go-to active part number that ensures compatibility and ease of use

Key Features

BOM (Bill of Materials) Available
�Software Development Kit
�Technical Reference Manual

Application

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Love yourself first.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	75 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	1 A	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	300 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	PN2222A
Continuous Collector Current	1 A	DC Current Gain hFE Max	300
Height	4.7 mm	Length	4.7 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	10000
Subcategory	Transistors	Technology	Si
Width	3.93 mm	Unit Weight	0.007055 oz