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Ideal for development of radio frequency systems
TO-92-3Manufacturer:
Mfr.Part #:
PN3563 TIN/LEAD
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
12 V
EDA/CAD Models:
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Avaq Semiconductor offers the highly versatile and reliable PN3563 TIN/LEAD driver, produced by Central Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the PN3563 TIN/LEAD.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 12 V | Collector- Base Voltage VCBO | 30 V |
Emitter- Base Voltage VEBO | 2 V | Collector-Emitter Saturation Voltage | - |
Maximum DC Collector Current | - | Pd - Power Dissipation | 350 mW |
Gain Bandwidth Product fT | 600 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | PN3563 |
Continuous Collector Current | 50 mA | DC Collector/Base Gain hfe Min | 20 |
DC Current Gain hFE Max | 200 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | Subcategory | Transistors |
Technology | Si |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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