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PN2907A PBFREE +BOM

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92-3

PN2907A PBFREE General Description

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92-3

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 1.6 V
Maximum DC Collector Current 600 mA Pd - Power Dissipation 625 mW
Gain Bandwidth Product fT 200 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Continuous Collector Current 600 mA
DC Collector/Base Gain hfe Min 100 DC Current Gain hFE Max 300
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2500
Subcategory Transistors Unit Weight 0.016000 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.176 $0.18
200+ $0.070 $14.00
500+ $0.068 $34.00
1000+ $0.067 $67.00

The prices below are for reference only.

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