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RF4L070BGTCR +BOM

High-power switching device ideal for DC-DC converters and motor control application

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RF4L070BGTCR General Description

N-Channel 60 V 7A (Ta) 2W (Ta) Surface Mount DFN2020-8S

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Specifications

Product Category: MOSFET Technology: Si
Mounting Style: SMD/SMT Transistor Polarity: N-Channel
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 7 A Rds On - Drain-Source Resistance: 40 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 7.6 nC Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2 W
Channel Mode: Enhancement Packaging: Cut Tape
Configuration: Single Fall Time: 4.4 ns
Product Type: MOSFET Rise Time: 5.7 ns
Factory Pack Quantity: 3000 Subcategory: MOSFETs
Typical Turn-Off Delay Time: 21 ns Typical Turn-On Delay Time: 8.7 ns
Part # Aliases: RF4L070BG

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In Stock: 3,654

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.449 $0.45
200+ $0.174 $34.80
500+ $0.168 $84.00
1000+ $0.165 $165.00

The prices below are for reference only.

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