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See Technical Specifications

RFP25N05L +BOM

TO-220AB N-Channel Silicon Power MOSFET having 25A Current and 50V Voltage

Manufacturer:

Harris Corporation
Mfr.Part #:

RFP25N05L
Datasheet:

RFP25N05L Datasheet (PDF)
Drain Source Voltage (Vdss):

50V
Continuous Drain Current (Id):

25A
Drain Source On Resistance (RDS(on)@Vgs,Id):

47mΩ@25A,5V
Power Dissipation (Pd):

60W
EDA/CAD Models:

Request Free CAD Models for RFP25N05L

RFP25N05L General Description

Renesas Electronics has once again delivered a cutting-edge product with the RFP25N05L power MOSFET transistor. Offering a maximum continuous drain current of 25A and a breakdown voltage of 55V, this transistor is built to handle the rigors of heavy-duty applications with ease. Its low gate charge further enhances its performance, ensuring swift and efficient operation in any system. The transistor's RoHS compliance is also a testament to Renesas' commitment to sustainability and environmental responsibility

Key Features

Micro-power consumption
Pulse-width modulation capability
Wide input voltage range
Silent fanless cooling system
Compact and lightweight design
Fault-tolerant multiple-redundancy architecture

Application

Digital cameras
Networking equipment
Healthcare devices

Specifications

Drain Source Voltage (Vdss)	50V	Continuous Drain Current (Id)	25A
Drain Source On Resistance (RDS(on)@Vgs,Id)	47mΩ@25A,5V	Power Dissipation (Pd)	60W
Gate Threshold Voltage (Vgs(th)@Id)	2V@250uA	Type	N Channel
Total Gate Charge (Qg@Vgs)	80nC@10V	Operating Temperature	-55℃~+150℃@(Tj)