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Item Specification: RFP70N06, N-channel MOSFET
TO-220-3Manufacturer:
Mfr.Part #:
RFP70N06
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
EDA/CAD Models:
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One of the key advantages of the RFP70N06 is its gate threshold voltage of 2 to 4 volts, which ensures compatibility with a wide range of control circuits. This flexibility makes it a valuable component for various electronic designs, where precise voltage control is necessary. Furthermore, the fast switching speed of the RFP70N06 enhances its performance in high-frequency applications, enabling reliable operation in demanding environments
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 70 A |
Rds On - Drain-Source Resistance | 14 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 156 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 150 W | Channel Mode | Enhancement |
Series | RFP70N06 | Configuration | Single |
Fall Time | 24 ns | Height | 16.3 mm |
Length | 10.67 mm | Product Type | MOSFET |
Rise Time | 137 ns | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 32 ns |
Typical Turn-On Delay Time | 10 ns | Width | 4.7 mm |
Part # Aliases | RFP70N06_NL | Unit Weight | 0.068784 oz |
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