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See Technical Specifications

RFP12N10L +BOM

N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

RFP12N10L
Datasheet:

RFP12N10L Datasheet (PDF)
Case Outline:

340AT
MSL Temp (°C):

0
Container Type:

TUBE
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for RFP12N10L

RFP12N10L General Description

The RFP12N10L is a powerful N-Channel enhancement mode silicon gate power field effect transistor that is designed specifically for use with logic level (5V) driving sources. Its applications are diverse, including programmable controllers, automotive switching, and solenoid drivers. This transistor's performance is achieved through a unique gate oxide design, which allows for full rated conduction at gate biases in the 3V to 5V range. This enables true on-off power control directly from logic circuit supply voltages, making it an ideal choice for various electronic applications. Formerly known as developmental type TA09526, the RFP12N10L is a reliable and efficient solution for power management in modern electronic devices

Key Features

12A, 100V
r_DS(ON)= 0.200Ω
Design Optimized for 5V Gate Drive
Can be Driven Directly from CMOS, NMOS, TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Application

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Specifications

Status	Active	Case Outline	340AT
MSL Temp (°C)	0	Container Type	TUBE
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	12 A	Rds On - Drain-Source Resistance	200 mOhms
Vgs - Gate-Source Voltage	- 10 V, + 10 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	60 W
Channel Mode	Enhancement	Series	RFP12N10L
Configuration	Single	Fall Time	80 ns
Height	16.3 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	70 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	100 ns	Typical Turn-On Delay Time	15 ns
Width	4.7 mm	Part # Aliases	RFP12N10L_NL
Unit Weight	0.068784 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

D**o 01/10/2023

It works well with my Ebike battery pack (116V fully charged), I was able to connect my 12V amplifier and listen to music. The heat sink didn't get warm, so it's very efficient.

Z**a 07/10/2022

Excellent quality. Fast shipping. Responsible seller. I recommend.

L**n 07/24/2021

Took for a screwdriver, everything went well.

L**n 05/01/2021

The order came quickly, everything corresponds to the description. The seller is good, i recommend!!!