This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SGB10N60A +BOM

Product description of SGB10N60A IGBT TO-263

Manufacturer:

Infineon
Mfr.Part #:

SGB10N60A
Datasheet:

SGB10N60A Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for SGB10N60A

SGB10N60A General Description

The SGB10N60A's robust design features a maximum operating frequency of 75kHz, allowing it to handle even the most demanding applications with ease. With its ability to withstand peak currents of up to 20A, this transistor is more than capable of handling the demands placed upon it

Key Features

Fast switching speed and high input impedance
Low on-state resistance and low gate charge
600V rated voltage and 10A continuous current
Isolation rating of 2,000V and compact package
High performance and reliable operation guaranteed
Durable construction and minimal maintenance needed

Application

Powerful applications
Efficient circuits
Versatile uses

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	SMD/SMT	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Maximum Gate Emitter Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	SGB10N60	Continuous Collector Current Ic Max	20 A
Height	4.4 mm	Length	10.25 mm
Product Type	IGBT Transistors	Factory Pack Quantity	1000
Subcategory	IGBTs	Width	9.9 mm
Part # Aliases	SGB10N60AXT SP000013790 SGB10N60AATMA1	Unit Weight	0.068654 oz