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SGW30N60HS +BOM
High Speed NPT Technology IGBT Transistors rated at 600 Volts and 30 Amps
TO-247-3-
Manufacturer:
-
Mfr.Part #:
SGW30N60HS
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
600 V
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EDA/CAD Models:
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Availability: 3157 PCS
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SGW30N60HS General Description
Combining high voltage capability with rapid switching speed, the SGW30N60HS is a versatile component suitable for a wide range of industrial applications. Its TO-247 package design offers low thermal resistance, enabling effective heat dissipation and reliable operation even in challenging environments. This robust transistor also includes an integrated free-wheeling diode, further enhancing its efficiency and overall performance in power-intensive tasks
Key Features
- Advanced thermal management
- Precise temperature control
- Silicon-based construction
Application
- Top performance in switching
- Efficient energy control
- Reliable electric power
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | SGW30N60 | Continuous Collector Current Ic Max | 41 A |
Height | 20.95 mm | Length | 15.9 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 240 |
Subcategory | IGBTs | Width | 5.3 mm |
Part # Aliases | SGW30N60HSXK SP000013770 SGW30N60HSFKSA1 | Unit Weight | 1.340411 oz |
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In Stock: 3,157
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $2.673 | $2.67 |
200+ | $1.035 | $207.00 |
500+ | $0.999 | $499.50 |
1000+ | $0.980 | $980.00 |
The prices below are for reference only.
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