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SGP10N60A +BOM

Silicon-based semiconductor for power switching applications

SGP10N60A General Description

The SGP10N60A N-channel IGBT is the epitome of excellence in high-power applications. With a voltage rating of 600V and a continuous current rating of 10A, this semiconductor device shines in a multitude of power electronic circuits and systems, thanks to its TO-220 package. Its low on-state voltage drop and fast switching speeds enable efficient power conversion and control, while its high input impedance simplifies drive with low power signals. Widely used in motor drives, power supplies, inverters, and welding equipment, the SGP10N60A is celebrated for its high reliability and rugged construction, making it the top choice for demanding industrial environments

Infineon Technologies Corporation Inventory
Infineon Technologies Corporation Original Stock

Specifications

Number of Pins 3 Collector Emitter Breakdown Voltage 600 V
Collector Emitter Voltage (VCEO) 600 V Element Configuration Single
Max Collector Current 20 A Max Operating Temperature 150 °C
Max Power Dissipation 92 W Min Operating Temperature -55 °C

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E**y 06/25/2023

Super fast delivered. Perfect

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D**n 04/23/2023

The goods came on time. Well packed. The seller is trustworthy 5 +++

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In Stock: 5,699

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.858 $2.86
200+ $1.106 $221.20
500+ $1.067 $533.50
1000+ $1.049 $1,049.00

The prices below are for reference only.

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