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SSM3J16FU +BOM

Designed for ruggedized operation with a high temperature range and electromagnetic immunit

Toshiba Semiconductor Inventory

Key Features

  • Characteristics
  • Symbol
  • Condition
  • Value
  • Unit
  • Gate threshold voltage (Max)
  • V
  • th
  • V
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 8.0
  • Ω
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 12
  • Ω
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 45
  • Ω
  • Input capacitance (Typ.)
  • C
  • iss
  • 11
  • pF
Toshiba Semiconductor Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series -
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 100µA Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 11 pF @ 3 V FET Feature -
Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C
Mounting Type Surface Mount Product Category MOSFET
Qualification AEC-Q101 Tradename MOSVI
Product Type MOSFET Subcategory MOSFETs

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Ratings and Reviews

More
N
N**s 11/29/2023

It came quickly. Five pieces soldered-all work! I recommend!

3
P
P**r 06/30/2022

Everything's fine. Delivered quickly.

14
N
N**s 10/30/2021

Very fast shipping, I will order more in the future. Tried some circuits, they worked.

17
M
M**n 10/28/2021

The parcel arrived in 12 days. Good layouts.

2

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SSM3J16FU Datasheet PDF

Preliminary Specification SSM3J16FU PDF Download

SSM3J16FU PDF Preview

In Stock: 6,066

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